| 摘要 |
PURPOSE:To provide a thin-film transistor inhibiting power consumption at a low value, capable of reducing leakage current and capable of increasing an on/off ratio. CONSTITUTION:An N channel type TFT 1 has a drain electrode 2, a gate electrode 4, a source electrode 6, a semiconductor layer 8 and a photovoltaic device 12. The semiconductor layer has a source region 3 and a drain region 5 doped in an N type and a channel region 7 positioned between both regions 3 and 5, and fine leakage current are made to flow in the channel region when voltage is applied between the source-drain electrodes. When voltage is applied to the gate electrode under the state, electrons are induced into the channel region, and on currents are made to flow between the electrodes. The photovoltaic device shields back light 11 projected into the channel region while converting absorbed back light into voltage, induces holes into the channel region, and has action, in which leakage current are reduced. |
