| 摘要 |
PURPOSE:To make it possible to reduce a resonator area, embody a lower working current and a lower threshold current and to manufacture semiconductor lasers on a mass production basis definitely and easily. CONSTITUTION:There is formed a semiconductor laser unit 4 of a first clad layer 11 of a first conductivity type having cross section of approximately trapezoidal form, and an active layer 12, and a second clad layer 13 of a second conductivity type, which is defined with a pair of inclined surfaces 3A and 3B which are opposed to each other and comprise a crystal surface {111}B on a ridge 2 formed in the crystal axis direction <011> on a compound semiconductor substrate 1 of the first conductivity type which has a crystal surface {100} as a main plane where a crystal surfaces {111} B are defined as a reflective surface of a resonator and an optical output end face. |
