| 摘要 |
PURPOSE:To provide a high luminance LED that makes it possible to form a semiconductor multilayer reflecting film having a high reflection factor and a wide reflection band for the improvement of light extraction efficiency, and enables the reduction of heterochromatic wavelength stray light. CONSTITUTION:ALED consists of a n-type GaAs substrate 101, a n-type semiconductor multilayer reflecting film, composed of a semiconductor thin film, formed on the substrate 101; and an InGaAlP double heterostructure section formed on the semiconductor multilayer reflecting film, composed of an active layer 105 sandwiched by a n-type cladding layer 104 and a p-type cladding layer 106, wherein light is extracted through the opposite surface to the substrate 101. The semiconductor multilayer reflecting film is formed with a first Bragg reflector 102 on the substrate 101 side, having wide reflection band characteristics and absorption losses; and a second Bragg reflector 103 on the double hetero-structure side, having a high reflection factor and transparent. |
