Production method for a nitrided silicon oxide layer with reduced thermal loading

摘要

A nitrided silicon oxide layer, which is required, for example, for very thin, reliable gate oxides and tunnelling oxides, is produced, with reduced thermal loading, in a RTP method in a gas mixture which contains an oxygen-containing and a nitrogen-containing gaseous substance. Particularly preferred gas mixtures are O3 + N2 or O2 + NH3. A possibly required second RTP step for subsequent treatment is preferably carried out in O3 and/or N2O, as a result of which the thermal loading can likewise be reduced.