| 摘要 |
A non-optical method for the formation of sub-half-micron holes, vias, or trenches within a substrate. For example, a substrate (30) having at least two buttresses (100) or a trench having an interbuttress distance (90) or a width of 1.0 to 0.5 microns, respectively, is conformally or non-conformally lined with a layer material (50). Thereafter, the layer material from horizontal surfaces is removed to form sidewall spacers, and expose the substrate surface, thereby narrowing the interbuttress distance (90) or the trench width, respectively, to sub-half-micron trenches. Finally, the buttresses (100) and layer material (50) are removed from the substrate. Alternatively, a template of buttresses or channel glass having openings, lined with layer material, on the order of sub-half-micron widths is placed on a substrate prior to anisotropic etching. The template is removed after etching the substrate, and can be used repeatedly.
|
