Method for anisotropic etching of silicon

摘要

In a method for anisotropic etching of silicon in which grooves (2, 3), which are of different sizes and which merge together from the surface of a Si wafer (1), are etched with the use of a suitable mask and a suitable etchant, it is intended to reduce the undercut etching of convex corners to such an extent that grooves which merge together very precisely can be produced. In a first etching step, grooves (2, 3) with different sizes are etched in ethylene diamine and thereafter oxidized, and then, in a second etching step, small grooves (4) are etched in to a point directly adjacent to the grooves (2, 3) of different sizes, in such a way that an intermediate web (4) remains between the two grooves (2, 3), and after the oxide layer is removed from the grooves (2, 3) with different sizes, the intermediate web (4) is etched off in potassium oxide solution in a third etching step. Optoelectronic converter modules.