| 摘要 |
PURPOSE:To provide a forming method wherein impurities introduction to a storage node is made more uniform, irregularity of wiring resistance is reduced, and unevenness on a surface is maintained in a suitable state, regarding the forming method of a storage node composed of a rough surface polycrystalline silicon film of a semiconductor device having a stacked capacitor cell, in paticular, of the capacitor cell part. CONSTITUTION:After a polycrystalline silicon film 8 turning to the lower layer of a storage node part is formed, impurities are implanted one time, and then a rough surface polycrystalline silicon film 9 is formed. A CVD-SiO2 film 51 containing impurities is deposited on the film 9. Solid-phase diffusion is performed from the CVD-SiO2 film 51 to the rough surface polycrystalline silicon film 9 by heat treatment. |
