High power semiconductor switch module.

摘要

A high power module (10) containing high power, high frequency semiconductor switching devices (18) and methods of operating the same provide high power and low inductance. The module (10) incorporates compositional, geometrical and electrical symmetry. The module (10) also includes short internal leads, special IC chip substrates, trimmable gate lead resistances, a special composite metal/ceramic baseplate and a special terminal conductor overlap.