| 摘要 |
<p>A strained quantum well structure comprises a substrate, and a strained quantum well. The strained quantum well has at least one well layer and a plurality of barrier layers. The well layer is sandwiched by the barrier layers. At least a portion of the well layer and the barrier layers is composed of semiconductor crystal whose amount of strain is distributed, and the band structure of the quantum well is constructed so that the transition in the quanrum well layer can be exchanged between states in which first polarization-state, typically transverse electric, transition is dominant and in which second polarization-state, typically transverse magnetic, transition is dominant. <IMAGE></p> |
