| 摘要 |
Silicon diode array vidicon targets characterized by a silicon oxide insulator disposed between P-type conductivity regions forming discrete diodes within an N-type conductivity wafer have been made substantially immune to burn-in by the utilization of a 0,1 to 3 micron thick electrically conducting glass layer to leak charge formed on the insulator to the adjacent P-type conductivity regions of the target. Preferably the electronically conducting glass is an alkaline earth metal borate glass containing an oxide of a metal, e.g., iron, vanadium, cobalt, etc., providing ions of both a higher valence state and a lower valence state within the glass to permit regulation of the resistivity of the glass layer during fabrication of the bulk glass. To inhibit crazing of the glass layer while providing superior contact between the glass and the surface of the target, the glass layer is R.F. sputter deposited atop the target employing a sputtering atmosphere, e.g., argon, nitrogen, oxygen, selected to provide the desired resistivity in the deposited glass layer.
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