A method for manufacturing a semiconductor light emitting device.

摘要

An AlGaAs chip 10 which has an n-type layer 11 and a p-type layer 12 is immersed in an aqueous solution containing 0.2-0.6 wt% of ammonia and 25-35 wt% of hydrogen peroxide to form a primary protective layer 20, and after drying the AlGaAs chip 10, the AlGaAs chip 10 is for a second time immersed in an aqueous solution containing 0.2-0.6 wt% of ammonia and 25-35 wt% of hydrogen peroxide to form a secondary protective layer 21.