| 摘要 |
The semiconductor superlattice structure (200) is made up of laminated layer (50) of III-V binary compound semiconductors AIP, GaP and InP each being deposited to a predetermined thickness of 1 to 10 atomic layers. Each laminated layers (50) constitutes one period. This semiconductor superlattice structure is used as an active layer of a semiconductor light emitting element, which eases the limitations on the shortest emission wavelength in relation to the use of the III-V compound semiconductor. This visible light emitting element has an emission wave-length lambda g shorter than 560 nanometers practicable by use of a III-V compound semiconductor. |
