发明名称 Vapour film deposition chamber - with conical plasma subchamber
摘要 <p>Noble gas filled chamber for the deposition of films by cathode sputtering comprises a conical plasma chamber into which are set inverted funnel shaped cathode surfaces in the smaller upper opening of which is fitted the anode and the larger opening faces the deposition subchamber. The deposition subchamber contains a cathode plate on which the substrate are placed. The chamber permits the deposition of thick films.</p>
申请公布号 DE2058921(A1) 申请公布日期 1972.05.31
申请号 DE19702058921 申请日期 1970.11.30
申请人 SIEMENS AG 发明人 DR. WEISER,JOSEF,DIPL.-PHYS.
分类号 C23C14/35;H01J37/34 主分类号 C23C14/35
代理机构 代理人
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