Substrate for semiconductor device.

摘要

A substrate for a semiconductor device having a diamond base material and a multisublayer wiring layer on the diamond base material, wherein the diamond base material is a diamond layer prepared by a vapor phase deposition, and the multisublayer wiring layer has at least one insulating sublayer having a relative dielectric constant of not larger than 5 or at least 12 and at least one metal wiring sublayer, can be used as a substrate for an high performance, high-speed operation semiconductor device.