发明名称 |
Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers |
摘要 |
A process for treatment of a silicon wafer to achieve therein a controlled distribution of the density of oxygen precipitate nucleation centers. In the process, one face of the wafer is shielded and the other, unshielded, face of the wafer is exposed to an atmosphere which contains nitrogen or a nitrogen compound gas and which has an essential absence of oxygen during a rapid thermal treatment at a temperature of at least about 1175 DEG C. The process generates nucleation centers which serve as sites for the growth of oxygen precipitates during a subsequent heat treatment and which have a peak density proximate the unshielded face of the wafer.
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申请公布号 |
US5401669(A) |
申请公布日期 |
1995.03.28 |
申请号 |
US19930062926 |
申请日期 |
1993.05.17 |
申请人 |
MEMC ELECTRONIC MATERIALS, SPA |
发明人 |
FALSTER, ROBERT;FERRERO, GIANCARLO;FISHER, GRAHAM;OLMO, MASSIMILIANO;PAGANI, MARCO |
分类号 |
H01L21/322;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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