发明名称 Circuit with diode-protected emitter resistors
摘要 An operational amplifier, of a type which comprises a differential cell transconductor input stage (2) incorporating a current mirror (5) provided with a pair of degenerative resistors (R9,R10) and a gain stage (7), driven directly by a transistor (Q12) of said mirror (5), has each degenerative resistor (R9,R10) formed within an epitaxial well wherewith a parasitic diode (D1,D2) is associated. Each diode (D1,D2) is connected in parallel with its corresponding resistor (R9,R10) to prevent the transistor (Q12) which drives the gain stage (7) from becoming saturated.
申请公布号 US5401995(A) 申请公布日期 1995.03.28
申请号 US19930099854 申请日期 1993.07.30
申请人 SGS-THOMSON MICROELECTRONICS, S.R.L. 发明人 LARI, FERDINANDO;ERRATICO, PIETRO
分类号 H01L21/8222;H01L27/06;H03F1/32;H03F3/45;(IPC1-7):H01L29/72;H01L27/02 主分类号 H01L21/8222
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