MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING MULTI-LAYER METAL WIRING STRUCTURE

摘要

The method includes the steps of depositing a first metal layer (12), an etching stopper layer (13), and a connection metal layer (14) on a Si substrate (11) to form a pattern photoresist film (15) thereon, forming a pattern pillar (16) thereon by a photolithography and an ion etching methods, forming a first metal layer pattern (17), depositing an inter layered insulating film (18) thereon, mechanically and chemically flattening the layer (18) to etch-back the residual film (18), and depositing and patterning a second metal layer thereon to form a second metal layer pattern (21), thereby using a local flattening process and an Al pillar to reduce the step coverage.