发明名称 Voltage converter arrangement for a semiconductor memory
摘要 In a voltage converter provided in a semiconductor memory and supplying an internal supply voltage to a circuit in the semiconductor memory, a circuit is provided for generating a first voltage whose dependency on an external supply voltage is regulated to a predetermined small value, while another circuit is provided for generating a second voltage whose dependency on the external supplying voltage is larger than the dependency of the first voltage. The voltage converter includes MOS transistors and differential amplifiers interconnected with one another, as well as voltage dividing means. The memory also includes a word line booster for boosting the internal supply voltage.
申请公布号 US5402375(A) 申请公布日期 1995.03.28
申请号 US19940207679 申请日期 1994.03.09
申请人 HITACHI, LTD;HITACHI VLSI ENGINEERING CORP. 发明人 HORIGUCHI, MASASHI;HORI, RYOICHI;ITOH, KIYOO;NAKAGOME, YOSHINOBU;AOKI, MASAKAZU;TANAKA, HITOSHI
分类号 G05F1/46;H03K17/693;(IPC1-7):G11C7/00 主分类号 G05F1/46
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