发明名称 |
Voltage converter arrangement for a semiconductor memory |
摘要 |
In a voltage converter provided in a semiconductor memory and supplying an internal supply voltage to a circuit in the semiconductor memory, a circuit is provided for generating a first voltage whose dependency on an external supply voltage is regulated to a predetermined small value, while another circuit is provided for generating a second voltage whose dependency on the external supplying voltage is larger than the dependency of the first voltage. The voltage converter includes MOS transistors and differential amplifiers interconnected with one another, as well as voltage dividing means. The memory also includes a word line booster for boosting the internal supply voltage.
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申请公布号 |
US5402375(A) |
申请公布日期 |
1995.03.28 |
申请号 |
US19940207679 |
申请日期 |
1994.03.09 |
申请人 |
HITACHI, LTD;HITACHI VLSI ENGINEERING CORP. |
发明人 |
HORIGUCHI, MASASHI;HORI, RYOICHI;ITOH, KIYOO;NAKAGOME, YOSHINOBU;AOKI, MASAKAZU;TANAKA, HITOSHI |
分类号 |
G05F1/46;H03K17/693;(IPC1-7):G11C7/00 |
主分类号 |
G05F1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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