发明名称 |
Frame transfer image sensor with electronic shutter |
摘要 |
An image sensing device with electronic shutter having a semiconductor substrate of a first conductivity type and a buried channel layer of a second conductivity type disposed on the substrate. Virtual phase electrodes in the buried channel layer having the first conductivity type form virtual gate potential areas in the substrate below the virtual phase electrodes. An insulating layer is formed on the substrate. Conductive electrodes disposed on the insulating layer and located over portions of the substrate between the virtual phase electrodes form clocked gate potential areas in the substrate below the conductive electrodes. The virtual gate potential areas and the clocked gate potential areas form charge transfer columns along which charge can be transferred to an end of the charge transfer column. A fast charge transfer mode wherein every other conductive electrode in a charge transfer column is clocked out of phase from the other conductive electrodes provides fast charge transfer through the charge transfer column.
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申请公布号 |
US5402459(A) |
申请公布日期 |
1995.03.28 |
申请号 |
US19930060192 |
申请日期 |
1993.05.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HYNECEK, JAROSLAV |
分类号 |
G11C27/04;H01L27/148;H01L29/768;H04N5/359;H04N5/3725;H04N5/376;(IPC1-7):G11C19/28;H01L29/796 |
主分类号 |
G11C27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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