2D/1D junction device as a Coulomb blockade gate

摘要

A junction is formed by the establishment of first and second adjacent conductivity regions having a transition therebetween from wide (2D) to narrow (1D) with respect to the electron wavelength at the Fermi level. The electrons in the wide region can be propagated at any of a continuum of energies in two dimensions while, in the narrow region, allowable energies become quantized, forming a potential barrier similar to a junction in a tunnel diode. The junction formed in this manner exhibits a Coulomb blockade effect and can be made to operate alternatively as an extremely small capacitance and a conductance to sequentially transfer single electrons, thus forming a Coulomb blockade gate. The Coulomb blockade gate can be used in an oscillator or in digital counting and memory applications.