<p>Disclosed is a method for forming improved Si-O containing coatings on electronic substrates. The method comprises treating Si-O containing ceramic coatings derived from hydrogen silsesquioxane resin with hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.</p>
申请公布号
CA2117593(A1)
申请公布日期
1995.03.23
申请号
CA19942117593
申请日期
1994.08.30
申请人
BALLANCE, DAVID S.;CAMILLETTI, ROBERT C.;DUNN, DIANA K.
发明人
BALLANCE, DAVID S.;CAMILLETTI, ROBERT C.;DUNN, DIANA K.