| 摘要 |
<p>A film forming device for forming films doped with impurities on the surfaces of objects to be processed, such as semiconductor wafers. This device is provided with a vertical reaction tube having an area in which objects to be processed, namely, semiconductor wafers are arranged. The semiconductor wafers are vertically arranged at intervals in an overlapping state in the area inside the reaction tube and a film forming gas is introduced into the reaction tube through a film forming gas introducing tube. This film forming device is also provided with a main doping gas introducing tube the gas outlet of which is located below the area in the reaction tube and through which the doping gas is introduced into the reaction tube upward, at least one auxiliary doping gas introducing tube the gas outlet of which is located above the outlet of the main doping gas introducing tube and through which the doping gas is introduced so as to supplement the doping gas supply from the main tube, an exhaust system for exhausting gas from the reaction tube, and a heating means which heats the inside of the reaction tube.</p> |
