Dynamic semiconductor memory device

摘要

A dynamic semiconductor memory device according to the present invention has first bit lines (11), second bit lines (12), which are arranged laminated partially above the first bit lines (11) and form bit-line pairs together with the first bit lines (11), for the formation of an arrangement with folded bit lines, and word lines (WL), which are arranged in such a way that they cross over the first bit lines (11) and the second bit lines (12), and at least one storage-cell field, in which storage cells (10), connected to the first bit lines (11) and the second bit lines (12), are arranged in a matrix, the storage-cell field comprising first regions, in which the storage cells (10) are arranged, and second regions, which are arranged in such a way that they alternate with the first regions and have no storage cells (10), and the second regions comprising such regions in which the first bit lines (11) of the established number of bit-line pairs are connected to the second bit lines (12), and the second bit lines (12) are connected to the first bit lines (11). <IMAGE>