Method for planarizing a semiconductor surface and devices manufactured by the method.

摘要

A semiconductor substrate (11) has concavities (14) and convexities (13) at an upper surface thereof, and silica particles (granular insulators) (15) are provided in the concavities to planarize the entire upper surface of the semiconductor substrate (11). First, the silica particles (15) are laid over an upper surface of a semiconductor substrate (11) to provide the granular insulators (15) in concavities (14) in the upper surface of the semiconductor substrate (11), and the silica particles (15) provided on convexities (13) on the upper surface of the semiconductor substrate (11) are removed. The concavities (14) are thus buried with the silica particles (15) so as to improve global planarizarion.