Method for producing refractory metal gate electrode.

摘要

A method for producing a refractory metal gate electrode includes forming a patterning mask layer that is dissolved by a solution including hydrogen ion and having a predetermined aperture on a semiconductor substrate, forming a gate metal layer having an ionization inclination larger than hydrogen on the entire surface on the patterning mask layer, forming a low resistance metal layer of a predetermined configuration having an ionization inclination smaller than hydrogen on the gate metal layer, covering at least an upper surface of the low resistance metal layer by a film which occurs no reductive reaction with the solution including hydrogen ion before or after patterning the gate metal layer, and removing the patterning mask layer using a solution including the hydrogen ion after patterning the gate metal layer. Therefore, a battery reaction of a system comprising the gate metal layer, the low resistance metal layer, and the solution including hydrogen ion can be suppressed by a film covering at least an upper surface of the low resistance metal layer, and localized abnormal melting at the gate metal layer occurring when removing the patterning mask layer using the solution including the hydrogen ion, can be suppressed.