Fabrication of a semiconductor device

摘要

Process as in BE 704674 for mfg. a semiconductor comprising a silicon semiconductor body with at least one semiconductor component, in which a planar layer of silicon oxide is applied on one surface of the silicon body in a laminated configuration with at least part of its thickness embedded in the body and by protecting the surface of the silicon body locally by a mask during oxidation. - The starting material is a layer of silicon on a substrate and during the application of the laminated configuration of silicon oxide, oxidation is carried out until the configuration extends over the whole surface of the silicon layer which is divided into a number of parts separated by the configuration. - The silicon layer is applied as an epitaxial layer of one conductivity type on a semiconductor support of the opposite conductivity type.