| 摘要 |
A GaP pure green light emitting element substrate comprising an n-type GaP layer (12) and a p-type GaP layer (14) formed on a GaP single crystal substrate (10), characterized by the fact that an intermediate GaP layer (13) is formed at the pn junction portion between said n-type GaP layer (12) and said p-type GaP layer (14), wherein said intermediate GaP layer has a donor concentration ND of less than 1 x 10<1><6> atoms/cm<3> and an acceptor concentration NA nearly equal to the donor concentration ND. The thickness of the intermediate GaP layer (13) is in the range of 3-5 micrometers. <IMAGE> |
