| 摘要 |
A technique of heteroepitaxially growing a compound semiconductor on a silicon wafer, which can simplify the growth sequence, and improve the productivity and the surface morphology of a growth film. In growing a compound semiconductor on a silicon wafer, the growth sequence such as shown in Fig. 1 is used. A necessary thin buffer layer is continuously grown at the temperature raising period up to the crystal growth temperature (Step 2). Therefore, an independent process of growing a buffer layer at a lower temperature is not necessary, and the surface morphology is also improved by this method of growing a compound semiconductor on a silicon wafer. |
