A MULTIPLE ALLOY OHMIC CONTACT FOR A SEMICONDUCTOR DEVICE

摘要

A protruding ohmic contact on a P type or N type semiconductor region is made by depositing an alloy of gold and a conductivity type impurity on the P type or N type region, which is heated up to a eutectic temperature of gold and the semiconductor material and thereafter depositing silver on the alloy contact; the conductivity type impurity used is such as produces the same conductivity type as that of the semiconductor region.