发明名称 |
Plasma flood system for the reduction of charging of wafers during ion implantation |
摘要 |
A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.
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申请公布号 |
US5399871(A) |
申请公布日期 |
1995.03.21 |
申请号 |
US19940243053 |
申请日期 |
1994.05.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ITO, HIROYUKI;ENGLAND, JONATHAN;PLUMB, FREDERICK;FOTHERINGHAM, IAN |
分类号 |
C23C14/48;H01J37/02;H01J37/20;H01J37/317;H01L21/265;H05H1/00;(IPC1-7):H01J37/317 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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