发明名称 |
Isolation region in a group III-V semiconductor device and method of making the same |
摘要 |
A semiconductor device having in a body of a group III-V semiconductor material at least one isolation region which is stable at temperatures up to about 900 DEG C. The isolation region is formed of ions of a group III or V element which are implanted into the body and then thermally annealed at a temperature of between 650 DEG C. and 900 DEG C. This provides the regions with voids which remove free carriers and makes the region highly resistive.
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申请公布号 |
US5399900(A) |
申请公布日期 |
1995.03.21 |
申请号 |
US19930133552 |
申请日期 |
1993.10.08 |
申请人 |
EASTMAN KODAK COMPANY |
发明人 |
KO, KEI-YU;CHEN, SAMUEL;LEE, SHUIT-TONG |
分类号 |
H01L21/265;H01L21/76;(IPC1-7):H01L27/02;H01L27/12 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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