Diode protected semiconductor device

摘要

A diode protected semiconductor device appropriate for the output of a radio frequency amplifier, which can withstand substantial power reflection due to output impedance mismatch, is provided. The device may be implemented monolithically, in the form of a field effect transistor (FET) (14) having a back to back diode pair (17) connecting the drain (18) to the source (19). The FET comprises multiple transistor portions (28) coupled together. The diode pair comprises corresponding diode pair portions (37) coupled together. The configuration provides easy integration of the diode pair (17) into typical FET structures.