Method for the rapid thermal processing of a semiconductor wafer by irradiation

摘要

In a method for rapid thermal processing of a semiconductor wafer by electromagnetic irradiation, an irradiation arrangement is provided for heating the semiconductor wafer which is surrounded by a quartz chamber. The irradiation arrangement has a reflector design and is employed such that the semiconductor wafer is irradiated so that a substantially identical temperature is achieved in a middle and in an edge region on the basis of an intensity distribution of the light and of the heat emission of the semiconductor wafer, each of which is respectively uniform by itself over the semiconductor wafer. The method serves the purpose of improving rapid thermal processing methods in the manufacture of integrated semiconductor circuits.