| 发明名称 |
Substrate having a built-in capacitor and process for producing the same |
| 摘要 |
In a substrate having built-in capacitor which is incorporated in and united with an insulator, the capacitor has a dielectric layer made of a silicon nitride-based ceramic containing silicon carbide in an amount of from 13 to 30% by weight.
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| 申请公布号 |
US5400210(A) |
申请公布日期 |
1995.03.21 |
| 申请号 |
US19930080107 |
申请日期 |
1993.06.23 |
| 申请人 |
NGK SPARK PLUG CO., LTD. |
发明人 |
SUGIMOTO, NORIYASU;KIMURA, YUKIHIRO;SETO, MASAHARU |
| 分类号 |
H01B3/12;H01G4/08;H01G4/12;H01L23/12;H01L23/15;H05K1/16;H05K3/46;(IPC1-7):H01G4/10 |
主分类号 |
H01B3/12 |
| 代理机构 |
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