| 摘要 |
A resistor is connected to the source/drain of a transistor and used as a load element of a memory cell. A trench is formed which extends from a top of the wafer through an isolation region of the wafer to a silicon base of the wafer. The silicon base of the wafer is located below the isolation region of the wafer. A resistive layer of material is formed in the trench. The resistive layer extends from the top of the wafer through the isolation region of the wafer and is electrically connected to the silicon base of the wafer. The resistor is connected to other circuitry on the wafer, for example, by implanting into the wafer atoms of a first conductivity type into a region immediately adjacent to the resistive layer of material in the trench. In the preferred embodiment, the resistive layer of material is deposited polysilicon.
|
