| 发明名称 |
Method of fabricating a silicon carbide vertical MOSFET and device |
| 摘要 |
A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS operation can be performed after the doped epitaxial layers are formed.
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| 申请公布号 |
US5399515(A) |
申请公布日期 |
1995.03.21 |
| 申请号 |
US19930090853 |
申请日期 |
1993.07.12 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
DAVIS, KENNETH L.;WEITZEL, CHARLES E. |
| 分类号 |
H01L21/04;H01L21/336;H01L29/12;H01L29/24;H01L29/78;(IPC1-7):H01L21/265;H01L21/302;H01L21/20 |
主分类号 |
H01L21/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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