Index-guided laser on grooved (001) substrate

摘要

An index-guided semiconductor laser having a grooved waveguide which uses the optical confinement resulting from the bandgap difference between two phases of OMVPE formed AlGaInP, and in which the higher bandgap phase occurs with AlGaInP grown on substrates orientated at angles less than 55 degrees with respect to the (001) plane. The device is fabricated on a (100) orientated substrate having an etched groove. By fabricating the sidewalls with an angle of between 5 degrees and 50 degrees with respect to the (100) plane of the substrate, composition differences between the (100) stripe center and the grooved sidewall are minimized.