| 摘要 |
<p>PURPOSE:To obtain a semiconductor device wherein an upper wiring layer on which bonding pads are provided and an interlayer insulating film that serves as a ground for the upper wiring layer can be enhanced in adhesion and lessened in contact resistance between them. CONSTITUTION:After an N<+>-type diffusion, layer 103 or the like is formed to serve as a lower wiring layer, an interlayer insulating film 105 of silicon oxide is formed by a plasma CVD method using mixed material gas of silane gas and N2O gas. A contact hole 106 is formed, and then a titanium film 107 and a titanium nitride film 108 are formed and a titanium silicide film 109 is formed on the base of the contact hole 106 through an RTA process carried out under prescribed conditions. At least, an aluminum allay film 110 is formed and then an upper wiring layer of at least three-layered structure is formed through a prescribed patterning process.</p> |
