发明名称 WAFER RETAINER FOR PLASMA CVD
摘要 <p>PURPOSE:To provide a wafer retainer for plasma CVD which can set a semiconductor wafer at a specified position, without rubbing against the main surface of the semiconductor wafer except a peripheral margin part. CONSTITUTION:A wafer retainer 1 is used when a film is sequentially formed on each of the surfaces of a semiconductor wafer by a plasma CVD method. A recessed part 1a having an U-shaped contour which is a little smaller than the outer diameter of the wafer is formed on the mounting surface of the retainer 1. Guide pawls 3 for engaging and retaining the semiconductor wafer at a specified position are discretely arranged on the periphery of the recessed part. Thereby the semiconductor wafer can be set at a specified position while the inner peripheral region of the main surface except an outer peripheral margin part is not in contact with the wafer retainer.</p>
申请公布号 JPH0778810(A) 申请公布日期 1995.03.20
申请号 JP19930222697 申请日期 1993.09.08
申请人 FUJI ELECTRIC CO LTD 发明人 MIYASAKA YASUSHI
分类号 C23C16/50;H01L21/205;H01L21/31;H01L21/68;H01L21/683;(IPC1-7):H01L21/31 主分类号 C23C16/50
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