| 摘要 |
PURPOSE:To suppress the generation of peeling of a transparent conductive film by forming the transparent film having ITO crystals, an average crystal grain diameter exceeding a specified value, and further forming a semiconductor film by a plasma containing reducing active species on this transparent conductive film. CONSTITUTION:A transparent conductive film having an ITO crystal is formed by a thin film forming means on a transparent substrate so that an average crystal grain diameter will be over 0.025mum. On this ITO transparent conductive film, another type of semiconductor film is formed by using a plasma which contains reducing active species such as a hydrogen radical. As a result, ruggedness is produced on the ITO surface, and this ruggedness relaxes stress inside the other type of semiconductor film and between the other type of semiconductor film and the ITO film. This enables the peeling of the ITO film to be suppressed. |
