| 摘要 |
PURPOSE:To obtain an LD excited solid-state laser device having a simple construction at a low cost by a method wherein specific number of layers of Sio2 films and Tio2 films having different specific thicknesses are alternately built up on the surface of an yttriuun/aluminum/oxide single crystal which is perpendicular to its crystal axis and an MgF2 film having a specific thickness is deposited on the right angle surface of the crystal. CONSTITUTION:Only one surface (whose width is 50mm and thickness is 1mm) of an yttrium/aluminum/oxide single crystal (YAG single crystal) whose width is 50mm, thickness is 1mm and length is 4mm is inclined by 48 degrees and all the other surfaces of the crystal are right angle surfaces. After all the surfaces except the side surfaces of this block are polished to mirror finish, 23 layers of Sio2 films and 23 layers of Tio2 films are alternately built up on the surface B inclined by 48 degrees so as to obtain a reflectivity not lower than 99.8%. 19 1ayers of Si02 films having thicknesses of 182nm (170-195nm) and 19 layers of Tio2 films having thicknesses of 115nm (110-130nm) are alternately built up on the upper half of the surface A of the YAG single crystal and an MgF2 film having a thickness of 377nm (300-500nm) is deposited on the lower half of the surface A. Then the YAG single crystal is cut into 60 pieces of YAG laser devices 3. |
