| 摘要 |
PURPOSE:To make it possible to make accurately a correction of a proximity effect even if a plurality of base patterned layers are formed by a method wherein pattern data to be exposed on a substrate surface layer to be formed with a pattern is split into small regions to calculate the density of the existence of the pattern and moreover, the pattern is drawn at a main exposure calculated on the basis of the intensity of the whole scattering of a charged particle beam. CONSTITUTION:A layer 3 to be processed is deposited on a base pattern 2 formed on a substrate 1 into a pattern form. Moreover, a resist layer, which is used as a surface layer, is applied to perform a patterning of the resist layer using a charged particle beam and thereafter, a pattern is transferred to the layer 3 by etching using the patterned resist layer as a mask. That is, in the first of a back scattering, which is generated in the interface between the resist layer and the substrate, of the beam entering one point on the resist layer, the pattern is made to expose to the beam on the layer 3 and the second of the back scattering, the beam entering the lower layer pattern 2 is reentered in the resist layer to make the pattern expose to the beam. Thereby, even if a plurality of base patterned layers, which affect the intensity of the back scattering, are formed, a correction of a proximity effect can be made accurately and at high speed. |
