| 摘要 |
PURPOSE:To prevent the eluation of an Al thin film generated when flux whose Cl<-> ion content is not limited is used, in the case that a solder bump formed by bonding a metal ball whose main element is one out of Pb, Sn and In to an Al electrode formed on a semiconductor chip substrate is subjected to reflow treatment. CONSTITUTION:A bump is bonded to an Al electrode by a wire bonding method or other methods. The bump is coated with flux wherein the Cl<-> ion content is restrained lower than or equal to 100wt. ppm. After that, the solder bump is heated and fused at the melting point or higher. Thereby the bump shape is made spherical, and a specified bonding strength is obtained between the solder bump and the Al electrode. |
