| 摘要 |
PURPOSE:To provide an internal wiring structure for semiconductor devices which can prevent the destruction of a case and the influence of an overcurrent on the peripheral control circuit of a semiconductor device by quickly disconnecting internal wiring when the overcurrent flows due to the fault of a semiconductor chip. CONSTITUTION:In a semiconductor device in which internal wiring is formed by wire-bonding between a semiconductor chip 4 mounted on the conductor pattern 3 of an insulating substrate 2 and leading-out terminals 5, an Si relay electrode, 9 having a conductivity is provided at least on the internal wiring route between input-side leading-out terminals and the chip 4 and Al wires 6 and 10 are bonded between the chip 4 and external leading-out terminals through the electrode 9. Therefore, an instantaneously melting section can be constituted by reducing the number of the wires 10 wired between the electrode 9 and leading-out terminals than that of the wires 6 wired between the electrode 9 and chip 4 and the bonding sections of the wires 10 are made to be quickly melted so as to block the overcurrent when the overcurrent is generated. |
