发明名称 MONOCHROMATIZED ELECTRON BEAM SOURCE AND ITS MANUFACTURE
摘要 <p>PURPOSE:To provide monochromatized electron beam source to be used in an electron beam device, wherein the beam source is structured simple and easy to fabricate and generates an electron beam having a very narrow energy width. CONSTITUTION:A covering film 2 having a thickness approx. corresponding to the permeation length of an electron wave is provided over the surface of a needle-shaped conductor 1, and a voltage is impressed from a power supply 5 between it and an anode 4. Thereby electrons 3 are released into the vacuum 6 by means of resonance tunnel phenomenon through a quantum level 7 produced in a barrier well layer 2' of the covering film 2.</p>
申请公布号 JPH0778581(A) 申请公布日期 1995.03.20
申请号 JP19930221670 申请日期 1993.09.07
申请人 HITACHI LTD 发明人 OKAMOTO MASAKUNI;OSHIMA TAKU;NAKAGAWA KIYOKAZU;NISHIYAMA HIDETOSHI;OKUYAMA YUTAKA;KONDO MASAHIKO
分类号 H01J37/073;H01J1/30;H01J1/304;H01L21/263;(IPC1-7):H01J37/073 主分类号 H01J37/073
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