发明名称 |
MONOCHROMATIZED ELECTRON BEAM SOURCE AND ITS MANUFACTURE |
摘要 |
<p>PURPOSE:To provide monochromatized electron beam source to be used in an electron beam device, wherein the beam source is structured simple and easy to fabricate and generates an electron beam having a very narrow energy width. CONSTITUTION:A covering film 2 having a thickness approx. corresponding to the permeation length of an electron wave is provided over the surface of a needle-shaped conductor 1, and a voltage is impressed from a power supply 5 between it and an anode 4. Thereby electrons 3 are released into the vacuum 6 by means of resonance tunnel phenomenon through a quantum level 7 produced in a barrier well layer 2' of the covering film 2.</p> |
申请公布号 |
JPH0778581(A) |
申请公布日期 |
1995.03.20 |
申请号 |
JP19930221670 |
申请日期 |
1993.09.07 |
申请人 |
HITACHI LTD |
发明人 |
OKAMOTO MASAKUNI;OSHIMA TAKU;NAKAGAWA KIYOKAZU;NISHIYAMA HIDETOSHI;OKUYAMA YUTAKA;KONDO MASAHIKO |
分类号 |
H01J37/073;H01J1/30;H01J1/304;H01L21/263;(IPC1-7):H01J37/073 |
主分类号 |
H01J37/073 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|