| 摘要 |
PURPOSE:To obtain a light-emitting diode which has a high luminance and the excellent stability of attachment. CONSTITUTION:An annular trench 17 is provided on the main surface of the p-type region 13 side of a semiconductor substrate composed of the p-type region 13 and an n-type region 12 composed of an n-type substrate 11 and an epitaxial layer and the center part and the circumferential part of the p-type region 12 are electrically separated from each other to increase the current density of the center part. An insulating film 23 of the trench 17 functions as a light reflective film. |
