| 摘要 |
PURPOSE: To form a capacitor with a metal oxide dielectric layer along with an upper electrode layer that is electrically connected to a lower circuit element. CONSTITUTION: A device can be utilized when forming an accumulation capacitor of DRAM and NVRAM cells. After a lower circuit element such as the source/drain regions of a transistor is formed, a metal oxide capacitor is formed on the circuit element. An opening is formed via the capacitor and is penetrated to a circuit element 11. An insulation spacer 51 is formed, and a conductive member 61 for electrically connecting the circuit element 11 to an upper electrode layer 15 of the metal oxide capacitor is formed. A device containing DRAM and NVRAM cells and a method for forming it is obtained. |
