NONVOLATILE STORAGE DEVICE

摘要

PURPOSE:To easily relieve many defects by providing latching circuits holding integer multiple writing data with respect to a readout bit and performing writings onto plural redundant data lines in a flash EEPROM. CONSTITUTION:Writing data of two pairs of memory arrays are held by MOSFETs Q9 and Q10 corresponding to one latching circuit FF and one of voltage supplying MOSFETs Q11 and Q12 corresponding to the circuit FF is selected by a column decoder YDCR1. Moreover, since four latching circuits corresponding to eight pairs of memory arrays are selected by a YDCR4, a writing of the unit of 8 bits is performed substantially in eight numbers of memory arrays having eight pairs of memory arrays respectively and the operation of the writing becomes the same as that of a readout-Latching circuits of a redundant circuit are provided by four numbers in accordance with a normal circuit and redundant data lines of eight lines are provided with respect to one memory array. Thus, the relief of defective data lines of eight lines at the muximum is made possible.