| 摘要 |
<p>PURPOSE:To effectively suppress the deformation of a low-resistance metallic layer having a compressive stress by a production process temp. by forming a laminated structure consisting of the low-resistance metallic layer and a high melting point metallic layer having a tensile stress as address wiring electrodes. CONSTITUTION:An insulating film 21 is formed for preventing the contamination from a glass substrate 11 and protecting the glass substrate 11. The low- resistance metallic layer 22 and the first high melting point metallic layer 23 are continuously formed at a film thickness of 50nm thereon. The film forming pressure of the first high melting metallic layer 23 is regulated within a range of 0.5 to 0.8Pa to provide the layer with the tensile stress. The laminated films are etched to work and form address wiring electrode patterns and auxiliary capacitance wiring electrode patterns to prescribed shapes. The second high melting point metallic layer 24 is then formed at a film thickness of 300nm. The low-resistance metallic layer 22-the first high melting point metallic layer 23 - the second high melting point metallic layer 24 forming the address wiring electrodes are commonly used as gate electrodes of thin-film transistors as switching elements.</p> |
