发明名称 SELF-TIME TYPE MEMORY-ARRAY AND TESTING METHOD THEREOF
摘要 PURPOSE: To block a memory operation correcting a state at the time of a shift mode and to shift all states capable of scanning by controlling a clock input and control signal to a memory array. CONSTITUTION: The memory array 10 is composed of a storage element 20, a control and address resistor 30, data input and output lines 40, 50 and a timing generating circuit 280. An external clock is received with the timing generating circuit 30 and a self timed internal clock pulse is transmitted. The resistor 30 is scanned with an array control and address resistor through a pin 55, and a bit is sent out from a pin 95 with resistors 60, 65, 70-90 shifted. A memory array resistor is provided with independent inputs 61, 66, 71-91, and the address and control information is loaded in a non-shift mode. A scanning output 95 is made to be a next scanning input in the memory array having plural chips. Also, when a pulse is generated from the timing generating circuit 280, all pulses are invalidated at the time of the shift mode, and independent pulses are added.
申请公布号 JPH0773696(A) 申请公布日期 1995.03.17
申请号 JP19930165986 申请日期 1993.06.14
申请人 SUN MICROSYST INC 发明人 MAIKERU EFU KURAIN
分类号 G01R31/28;G06F11/22;G11C29/00;G11C29/12;G11C29/32;G11C29/52;H01L21/66 主分类号 G01R31/28
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